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RLDRAM 3

Home > Technology > External Memory > RLDRAM III

RLDRAM is a low-latency DRAM with SRAM-like random access. RLDRAM outperforms DDR3 in sustaining high bandwidth and is utilized for high-end networking applications that require back-to-back read and write operations. Altera's Stratix® V FPGA supports RLDRAM 3 with a speed up to 1,600 Mbps.

Table 1 lists the features of RLDRAM II and RLDRAM 3.

Table 1. RLDRAM II and RLDRAM 3 Features
Feature RLDRAM II RLDRAM 3 
Voltage (core; I/Os) 1.8; 1.5 / 1.8 1.35; 1.2
Clock 533 MHz 1,067 MHz
Data rate 1,067 Mbps 2,133 Mbps
Row cycle time (tRC) 15 ns Less than 10 ns
Density 576 Mb 576 Mb (stackable to 1 Gb)
Multibank write N/A 2 to 4 banks
Banks 8 16
Termination (ODT to VDDQ/2) 150 ohm 40, 60, 120 ohm
Output drive 25 to 60 ohm 40, 60 ohm
Burst length 2, 4, 8 2, 4, 8
Training N/A Read training
Data read strobe Per word Per byte
Data masking 1 mask bit/36 DQs 2 mask bits/36 DQs
Refresh Bank dependent Bank dependent (multibank capable)
Reset pin N/A Included

Vendor

  • Micron, Inc
  • Integrated Silicon Solution, Inc (ISSI) 

Related Links

  • External Memory Interface Spec Estimator
  • Altera® RLDRAM 3 Wiki (including reference design) 
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